Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
4.2±0.2
16.7±0.3 7.5±0.2 0.7±0.1
For high breakdown voltage high-speed switching
- Features
10.0±0.2 5.5±0.2
Unit: mm 4.2±0.2 2.7±0.2
- High-speed switching
- High collector-emitter voltage (Base open) VCEO
φ 3.1±0.1
- Full-pack package which can be installed to the heat sink with one screw
1.4±0.1
1.3±0.2
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