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2SC4606 - NPN Transistor

Key Features

  • 4.5±0.1 3.5±0.1.
  • High collector-emitter voltage (Base open) VCEO.
  • Optimum for the driver stage of a low-frequency and 25 W to 30 R 0.7 R 0.9 W output amplifier.
  • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board (0.85) 0.45±0.05 2.0±0.2 4.1±0.2 2.4±0.2 1.0±0.1 /0.55±0.1.
  • Absolute Maximum Ratings Ta = 25°C e pe) Parameter Symbol Rating Unit 1.25±0.05 c e. d ty Collector-base vo.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors 2SC4606 Silicon NPN epitaxial planar type For low-frequency driver amplification Unit: mm Complementary to 2SA1762 6.9±0.1 (1.5) (1.5) 2.5±0.1 (1.0) (1.0) (0.4) ■ Features 4.5±0.1 3.5±0.1 • High collector-emitter voltage (Base open) VCEO • Optimum for the driver stage of a low-frequency and 25 W to 30 R 0.7 R 0.9 W output amplifier • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board (0.85) 0.45±0.05 2.0±0.2 4.1±0.2 2.4±0.2 1.0±0.1 /0.55±0.1 ■ Absolute Maximum Ratings Ta = 25°C e pe) Parameter Symbol Rating Unit 1.25±0.05 c e.