Datasheet4U Logo Datasheet4U.com

2SC4638 - NPN Transistor

Key Features

  • 0.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2.
  • High-speed switching.
  • High collector-base voltage (Emitter open) VCBO φ 3.1±0.1.
  • Low collector-emitter saturation voltage VCE(sat).
  • Full-pack package which can be installed to the heat sink with one screw.
  • Absolute Maximum Ratings TC = 25°C 1.4±0.1 1.3±0.2 / Parameter Symbol Rating Unit 14.0±0.5 Solder Dip (4.0) 0.8±0.1 0.5+.
  • 00..12 Collector-base voltage (Emitter open) VCBO 800 V e ) Collector-em.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC4630 NPN TRANSISTOR Sanyo Semicon Device
2SC4630LS NPN Triple Diffused Planar Silicon Transistor Sanyo Semicon Device
2SC4631 NPN TRANSISTOR Sanyo Semicon Device
2SC4632 NPN TRANSISTOR Sanyo Semicon Device
2SC4633 NPN TRANSISTOR Sanyo Semicon Device

Other Datasheets by Panasonic

Part Number Description
2SC4606 NPN Transistor
2SC4626 Silicon NPN Transistor
2SC4627 NPN TRANSISTOR
2SC4655 NPN TRANSISTOR
2SC4656 NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power Transistors 2SC4638 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 ■ Features 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2 • High-speed switching • High collector-base voltage (Emitter open) VCBO φ 3.1±0.1 • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw ■ Absolute Maximum Ratings TC = 25°C 1.4±0.1 1.3±0.2 / Parameter Symbol Rating Unit 14.0±0.5 Solder Dip (4.0) 0.8±0.1 0.5+–00..12 Collector-base voltage (Emitter open) VCBO 800 V e ) Collector-emitter voltage (E-B short) VCES 800 V c type Collector-emitter voltage (Base open) VCEO 500 V n d tage.