Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.2±0.2
16.7±0.3 7.5±0.2 0.7±0.1
- Features
10.0±0.2 5.5±0.2
4.2±0.2 2.7±0.2
- High-speed switching
- High collector-base voltage (Emitter open) VCBO
φ 3.1±0.1
- Low collector-emitter saturation voltage VCE(sat)
- Full-pack package which can be installed to the heat sink with one screw
-...