Overview: Transistor 2SC4808
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
Unit: mm
1.6±0.15 1.6±0.1 q q q 1.0±0.1 0.5 q Low noise figure NF. High gain. High transition frequency fT. SSMini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1 0.5 3 2 0.45±0.1 0.3 0.75±0.15 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 10 2 80 125 125 –55 ~ +125 Unit V V V mA mW ˚C ˚C
1:Base 2:Emitter 3:Collector EIAJ:SC–75 SS–Mini Type Package Marking symbol : 3M s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Maximum unilateral power gain Noise figure (Ta=25˚C)
Symbol ICBO IEBO VCBO VCEO hFE fT Cob | S21e NF |2 GUM Conditions VCB = 10V, IE = 0 VEB = 2V, IC = 0 IC = 10µA, IE = 0 IC = 100µA, IB = 0 VCE = 8V, IC = 20mA* VCE = 8V, IC = 15mA, f = 800MHz VCB = 10V, IE = 0, f = 1MHz VCE = 8V, IC = 15mA, f = 800MHz VCE = 8V, IC = 15mA, f = 800MHz VCE = 8V, IC = 7mA, f = 800MHz
* min typ 0 to 0.1 s Absolute Maximum Ratings (Ta=25˚C) 0.2±0.1 max 1 1 0.15–0.05 +0.1 0.2–0.
