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2SC4985 Datasheet NPN Transistor

Manufacturer: Panasonic

Overview: Power Transistors 2SC4985 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 7.5±0.2 Unit: mm 4.5±0.2 q q q High collector to base voltage VCBO High collector to emitter VCEO Allowing automatic insertion with radial taping 10.8±0.

Key Features

  • 3.8±0.2 90° 0.65±0.1 0.85±0.1 2.5±0.1 1.0±0.1 0.7±0.1 0.7±0.1 0.8C 0.8C s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 900 800 7 2 1 1.5 150.
  • 55 to +150 Unit V V V A A W ˚C ˚C 16.0±1.0 0.5±0.1 2.5±0.2 0.8C 2.5±0.2 0.4±0.1 2.05±0.2 1 2 3 1:E.

2SC4985 Distributor

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