3.8±0.2
90° 0.65±0.1 0.85±0.1
2.5±0.1
1.0±0.1 0.7±0.1 0.7±0.1
0.8C
0.8C
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings 900 800 7 2 1 1.5 150.
55 to +150 Unit V V V A A W ˚C ˚C
16.0±1.0
0.5±0.1 2.5±0.2 0.8C 2.5±0.2
0.4±0.1 2.05±0.2
1
2
3
1:E.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Power Transistors
2SC4985
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
7.5±0.2
Unit: mm
4.5±0.2
q q q
High collector to base voltage VCBO High collector to emitter VCEO Allowing automatic insertion with radial taping
10.8±0.2
s Features
3.8±0.2
90° 0.65±0.1 0.85±0.1
2.5±0.1
1.0±0.1 0.7±0.1 0.7±0.1
0.8C
0.8C
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings 900 800 7 2 1 1.5 150 –55 to +150 Unit V V V A A W ˚C ˚C
16.0±1.0
0.5±0.1 2.5±0.2 0.8C 2.5±0.2
0.4±0.1 2.05±0.
2SC4985 Datasheet
