2SC5104 Description
Power Transistors 2SC5104 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 8.5±0.2 Unit: mm 3.4±0.3 6.0±0.2 1.0±0.1.
2SC5104 Key Features
- High-speed switching
- High collector-base voltage (Emitter open) VCBO
- Wide safe operation area
- Satisfactory linearity of forward current transfer ratio hFE
- N type package enabling direct soldering of the radiating fin to the