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2SC5127A - NPN TRANSISTOR

Key Features

  • q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings 800 900 800 900 500 8 3.0 1.5 0.5 25 2 150.
  • 55 to +150 Unit V 15.0±0.3 3.0±0.2 Parameter Collector to base voltage Collector to 2SC5127 2SC5127A 2SC5127 Symbol VCBO VCES VCEO VEBO ICP IC IB 13.7.
  • 0.2 +0.5 s Absolute Maximum Rating.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SC5127, 2SC5127A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings 800 900 800 900 500 8 3.0 1.5 0.5 25 2 150 –55 to +150 Unit V 15.0±0.3 3.0±0.2 Parameter Collector to base voltage Collector to 2SC5127 2SC5127A 2SC5127 Symbol VCBO VCES VCEO VEBO ICP IC IB 13.7–0.2 +0.5 s Absolute Maximum Ratings 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.