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2SC5216 - NPN TRANSISTOR

Key Features

  • q q 0.65±0.15 1.5.
  • 0.05 +0.25 0.65±0.15 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg +0.2 1.1.
  • 0.1 (Ta=25˚C) Ratings 15 8 3 50 200 150.
  • 55 ~ +150 Unit V V V mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO.
  • 236 EIAJ:SC.
  • 59 Mini Type Package Marking symbo.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SC5216 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm +0.2 2.8 –0.3 s Features q q 0.65±0.15 1.5 –0.05 +0.25 0.65±0.15 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg +0.2 1.1 –0.