q q q
1.5
1.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Peak base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature.
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Power Transistors
2SC5243
Silicon NPN triple diffusion mesa type
For horizontal deflection output
20.0±0.5
Unit: mm
φ 3.3±0.2 5.0±0.3 3.0
6.0
s Features
q q q
1.5
1.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Peak base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
*Non-repetitive
20.0±0.5 2.5
2.0±0.3 3.0±0.3 1.0±0.2
(TC=25˚C)
Ratings 1700 1700 6 15 30 10 200 3.5 150 –55 to +150 Unit V V V A A A W ˚C ˚C
2.7±0.3
Symbol VCBO VCES VEBO IC ICP* IBP PC Tj Tstg
0.6±0.2 5.45±0.3 10.9±0.
2SC5243 Datasheet
