Datasheet4U Logo Datasheet4U.com

2SC5419 - NPN Transistor

Datasheet Summary

Features

  • High collector-emitter voltage (Base open) VCEO.
  • High transition frequency fT 0.65 max. (1.0) 14.5±0.5.
  • Allowing supply with the radial taping.
  • Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) VCBO 300 V pe) Collector-emitter voltage (Base open) VCEO 300 V nc d ge. ed ty Emitter-base voltage (Collector open) VEBO 7 V sta tinu Collector current IC 70 mA a e cle con Peak collector curren.

📥 Download Datasheet

Datasheet preview – 2SC5419

Datasheet Details

Part number 2SC5419
Manufacturer Panasonic Semiconductor
File Size 218.10 KB
Description NPN Transistor
Datasheet download datasheet 2SC5419 Datasheet
Additional preview pages of the 2SC5419 datasheet.

📁 Similar Datasheet

  • 2SC5411 - NPN TRANSISTOR (Toshiba Semiconductor)
  • 2SC5411 - PNP Transistor (INCHANGE)
  • 2SC5413 - NPN Power Transistors (Panasonic)
  • 2SC5414 - NPN TRANSISTOR (Sanyo Semicon Device)
  • 2SC5414A - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC5415 - NPN TRANSISTOR (Sanyo Semicon Device)
  • 2SC5415A - RF Transistor (ON Semiconductor)
  • 2SC5416 - NPN TRANSISTOR (Sanyo Semicon Device)
  • 2SC5416 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC5416 - NPN Transistor (INCHANGE)
Other Datasheets by Panasonic Semiconductor

Full PDF Text Transcription

Click to expand full text
Transistors 2SC5419 Silicon NPN triple diffusion planar type For low-frequency output amplification 6.9±0.1 0.7 4.0 Unit: mm 2.5±0.1 (0.8) (0.5) (1.0) (0.2) 4.5±0.1 ■ Features • High collector-emitter voltage (Base open) VCEO • High transition frequency fT 0.65 max. (1.0) 14.5±0.5 • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) VCBO 300 V pe) Collector-emitter voltage (Base open) VCEO 300 V nc d ge.
Published: |