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2SC5517 - NPN Transistor

Key Features

  • High breakdown voltage, and high reliability through the use of a glass passivation layer.
  • High-speed switching.
  • Wide area of safe operation (ASO) 5˚ (4.0) 5˚ 2.0±0.2 5˚ / 1.1±0.1 0.7±0.1 I Absolute Maximum Ratings TC = 25°C 5.45±0.3 e ) Parameter Symbol Rating Unit 18.6±0.5 (2.0) Solder Dip c type Collector to base voltage VCBO 1 700 V 3.3±0.3 5.5±0.3 n d ge. ed Collector to emitter voltage VCES 1 700 (2.0) V sta tinu Emitter to base voltag.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SC5517 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 φ 3.2±0.1 Unit: mm 3.0±0.3 5˚ 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 I Features • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide area of safe operation (ASO) 5˚ (4.0) 5˚ 2.0±0.2 5˚ / 1.1±0.1 0.7±0.1 I Absolute Maximum Ratings TC = 25°C 5.45±0.3 e ) Parameter Symbol Rating Unit 18.6±0.5 (2.0) Solder Dip c type Collector to base voltage VCBO 1 700 V 3.3±0.3 5.5±0.3 n d ge. ed Collector to emitter voltage VCES 1 700 (2.