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2SC5546 - NPN Transistor

Key Features

  • s 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5.
  • High breakdown voltage, and high reliability through the use of a glass passivation layer.
  • High-speed switching.
  • Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚.
  • Absolute Maximum Ratings TC = 25°C 1.1±0.1 0.7±0.1 / Parameter Symbol Rating Unit 18.6±0.5 (2.0) Solder Dip 5.45±0.3 e ) Collector-base voltage (Emitter open) VCBO 1 700 V c type Collector-emitte.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SC5546 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ■ Features 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚ ■ Absolute Maximum Ratings TC = 25°C 1.1±0.1 0.7±0.1 / Parameter Symbol Rating Unit 18.6±0.5 (2.0) Solder Dip 5.45±0.3 e ) Collector-base voltage (Emitter open) VCBO 1 700 V c type Collector-emitter voltage (E-B short) VCES 1 700 3.3±0.3 5.5±0.3 V n d tage. ued Collector-emitter voltage (Base open) VCEO 600 (2.