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2SC5553 Datasheet NPN Transistor

Manufacturer: Panasonic

Overview: Power Transistors 2SC5553 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output (10.0) 15.5±0.5 φ 3.2±0.1 5° 3.0±0.3 5° 26.5±0.5 (23.4) 5° 5° 5° 0.7±0.

Key Features

  • High breakdown voltage, and high reliability through the use of a glass passivation layer.
  • High-speed switching.
  • Wide area of safe operation (ASO) (4.5) (2.0) 18.6±0.5 (2.0) Solder Dip (4.0) 2.0±0.2 1.1±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCES VCEO Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg VE.

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