The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Transistors
2SC5556
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
Unit: mm
■ Features • Low noise figure NF
0.40+–00..0150 3
0.16+–00..0160
1.50–+00..0255 2.8–+00..32
• High transition frequency fT
0.4±0.2
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
1
2
packing
(0.95) (0.95)
5˚
(0.65)
1.9±0.1
/ ■ Absolute Maximum Ratings Ta = 25°C
2.90+–00..0250
10˚
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
15
V
c e. d ty Collector-emitter voltage (Base open) VCEO
10
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
2
0 to 0.1 1.1–+00..12 1.1–+00..
2SC5556 Datasheet
