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Transistors
2SC0829 (2SC829)
Silicon NPN epitaxial planar type
For high-frequency amplification
Unit: mm
5.0±0.2
4.0±0.2
5.1±0.2
■ Features • Optimum for RF amplification, oscillation, mixing, and IF stage
of FM/AM radios
0.7±0.2 12.9±0.5
0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
/ Collector-base voltage (Emitter open) VCBO
30
V
0.45+–00..115
0.45+–00..115
e Collector-emitter voltage (Base open) VCEO
20
V
c type) Emitter-base voltage (Collector open) VEBO
5
V
n d ge. ed Collector current
IC
30
mA
2.3±0.2
le sta ntinu Collector power dissipation
PC
400
mW
a e cyc isco Junction temperature
Tj
150
°C
life d, d Storage temperature
Tstg −55 to +150 °C
2.5+–00..26
2.5+–00..
2SC829 Datasheet
