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2SD0958 - Silicon NPN Transistor

Key Features

  • et4U. net 2SD0958 PC  Ta 500 24 IB = 50 µA IC  VCE Ta = 25°C VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) 100 IC / IB = 10 Collector power dissipation PC (mW) 400 20 Collector current IC (mA) 45 µA 40 µA 35 µA 10 16 300 12 30 µA 25 µA 1 200 8 20 µA 15 µA 25°C 0.1 Ta = 75°C.
  • 25°C 100 4 10 µA 5 µA 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.01 0.1 1 10 100 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Col.

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www.DataSheet4U.net Transistors 2SD0958 (2SD958) Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) (0.4) (1.5) (1.5) Unit: mm 6.9±0.1 2.5±0.1 (1.0) 3.5±0.1 1.0±0.1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 120 120 7 20 50 400 150 −55 to +150 Unit V V V mA mA mW °C °C 3 (2.5) 2 (2.5) 1 1.25±0.05 ■ Absolute Maximum Ratings Ta = 25°C (0.85) 0.55±0.1 2.4±0.2 0.45±0.