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2SD1258 - Silicon NPN triple diffusion Transistor

Datasheet Summary

Features

  • q q q 1.5max. 1.1max. High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 200 150 6 2.5 1 0.1 40 1.3 150.
  • 55 to +150 Unit V V 10.5min. 2.0 0.8±0.1 0.5max. 2.54±0.3 5.08±0.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base vol.

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Datasheet Details

Part number 2SD1258
Manufacturer Panasonic Semiconductor
File Size 48.33 KB
Description Silicon NPN triple diffusion Transistor
Datasheet download datasheet 2SD1258 Datasheet
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Full PDF Text Transcription

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Power Transistors 2SD1258 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 10.0±0.3 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q 1.5max. 1.1max. High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 200 150 6 2.5 1 0.1 40 1.3 150 –55 to +150 Unit V V 10.5min. 2.0 0.8±0.1 0.5max. 2.54±0.3 5.08±0.
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