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Power Transistors
2SD1274, 2SD1274A, 2SD1274B
Silicon NPN triple diffusion planar type
For power amplification
Unit: mm
0.7±0.1
s Features
q q q
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1
4.2±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage 2SD1274 2SD1274A 2SD1274B 2SD1274 2SD1274A 2SD1274B VCEO VEBO IC PC Tj Tstg VCES VCBO Symbol
(TC=25˚C)
Ratings 150 200 250 150 200 250 80 6 5 40 2 150 –55 to +150 V V A W ˚C ˚C V
5.08±0.5 1 2 3
16.7±0.3
High collector to base voltage VCBO High-speed switching Full-pack package which can be installed to the heat sink with one screw
7.5±0.2
Unit
14.0±0.5
Solder Dip
4.0
1.3±0.2
V
0.8±0.1
0.5 +0.2 –0.1
2.54±0.