• Part: 2SD1274B
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Panasonic
  • Size: 56.73 KB
2SD1274B Datasheet (PDF) Download
Panasonic
2SD1274B

Key Features

  • 0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1
  • 2±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage 2SD1274 2SD1274A 2SD1274B 2SD1274 2SD1274A 2SD1274B VCEO VEBO IC PC Tj Tstg VCES VCBO Symbol (TC=25˚C) Ratings 150 200 250 150 200 250 80 6 5 40 2 150 -55 to +150 V V A W ˚C ˚C V
  • 08±0.5 1 2 3
  • 7±0.3 High collector to base voltage VCBO High-speed switching Full-pack package which can be installed to the heat sink with one screw
  • 5±0.2 Unit
  • 0±0.5 Solder Dip
  • 3±0.2 V
  • 8±0.1
  • 5 +0.2 -0.1
  • 54±0.25 Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current 2SD1274 2SD1274A 2SD1274B (TC=25˚C) Symbol Conditions VCB = 150V, IE = 0 ICBO VCEO(sus)* VEBO hFE VBE VCE(sat) fT tf VCB = 200V, IE = 0 VCB = 250V, IE = 0 IC = 0.2A, L = 25mH IE = 1mA, IC = 0 VCE = 4V, IC = 5A VCE = 4V, IC = 5A IC = 5A, IB = 1A VCE = 10V, IC = 0.5A, f = 10MHz IC = 5A, IB1 = 0.8A, VEB = -5V X L 25mH Y 15V G 80 IC(A) 0.2 0.1 VCE(V) min typ max 1 1 1 Unit mA Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Fall time