2SD1330 - Silicon NPN Transistor

Panasonic

Key Features

7 Unit nA V V V 25 20 12 200 60 0.13 0.4 1.2 200 10 1.0.
2 800 V V MHz pF Ω Pulse measurement FE1 Rank classification R 200 ~ 350 S 300 ~ 500 T 400 ~ 800 Measurement circuit 1kΩ Rank hFE1 IB=1mA f=1kHz V=0.3V VB VV VA Ron= VB !1000(Ω) VA.
VB 1 Transistor PC.
Ta 1000 1.2 IB=4.0mA 800 1.0 Ta=25˚C 3.5mA 3.0mA 0.8 2.5mA 2.0mA 0.6 1.5mA 0.4 1.0mA 0.5mA 0.2 2SD1330 IC.
VCE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.

2SD1330 silicon npn transistor by Panasonic - Datasheet Preview

Datasheet Details

Part number	2SD1330
Manufacturer	Panasonic
File Size	42.47 KB
Description	Silicon NPN Transistor
Datasheet	2SD1330 Datasheet

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Full PDF Text Transcription (Reference)

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Transistor 2SD1330 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter 0.4 Unit: mm 6.9±0.1 1.5 1.5 R0.9 R0.9 2.4±0.2 2.0±0.2 3.5±0.1 2.5±0.1 1.0 1.0 q q q R 0. q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 25 20 12 1 0.5 600 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 1:Base 2:Collector 3:Emitter 2.5 2.