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2SD1446 - Silicon NPN Transistor

Datasheet Summary

Features

  • q q q 4.0 High foward current transfer ratio hFE High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 500 400 5 10 6 40 2 150.
  • 55 to +150 Unit V V V A A W ˚C ˚C 16.7±0.3 φ3.1±0.1 1.4±0.1 1.3±0.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Jun.

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Datasheet Details

Part number 2SD1446
Manufacturer Panasonic Semiconductor
File Size 63.50 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1446 Datasheet
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Power Transistors 2SD1446 Silicon NPN triple diffusion planar type Darlington For power amplification 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 Unit: mm 7.5±0.2 s Features q q q 4.0 High foward current transfer ratio hFE High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 500 400 5 10 6 40 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 16.7±0.3 φ3.1±0.1 1.4±0.1 1.3±0.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 14.0±0.5 0.8±0.1 0.5 –0.1 +0.2 2.54±0.
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