Datasheet Summary
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor
DESCRIPTION
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A
- High DC Current Gain
: hFE= 500(Min) @ IC= 2A, VCE= 2V
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Power amplification...
