Datasheet Summary
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
DESCRIPTION
- Low Collector Saturation Voltage
: VCE(sat)= 0.6V(Max)@ IC= 10A
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 20V (Min)
- Fast Switching Speed
- plement to Type 2SB948
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power amplifier and low-speed switching...