Datasheet4U Logo Datasheet4U.com

2SD1441 - NPN Transistor

Datasheet Summary

Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for horizontal deflection output applications.

📥 Download Datasheet

Datasheet preview – 2SD1441

Datasheet Details

Part number 2SD1441
Manufacturer INCHANGE
File Size 210.16 KB
Description NPN Transistor
Datasheet download datasheet 2SD1441 Datasheet
Additional preview pages of the 2SD1441 datasheet.

📁 Similar Datasheet

  • 2SD1441 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1440 - Power Transistor (Inchange Semiconductor)
  • 2SD1444 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SD1444 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1444A - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SD1444A - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1445 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SD1445 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1445A - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SD1445A - SILICON POWER TRANSISTOR (SavantIC)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor 2SD1441 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 4 A ICP Collector Current-Peak 15 A IBP Base Current-Peak Collector Power Dissipation @ Ta= 25℃ PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 3.5 A 2.5 W 70 130 ℃ Tstg Storage Temperature Range -55~130 ℃ isc website：www.iscsemi.
Published: |