2SD1719 - Silicon NPN triple diffusion planar type Transistor

Panasonic

Key Features

s.
High forward current transfer ratio hFE which has satisfactory linearity.
High emitter-base voltage (Collector open) VEBO.
N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0±0.3 1.5±0.1 Unit: mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 4.4±0.5.
Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (C.

2SD1719 silicon npn triple diffusion planar type transistor by Panasonic - Datasheet Preview

Datasheet Details

Part number	2SD1719
Manufacturer	Panasonic
File Size	94.87 KB
Description	Silicon NPN triple diffusion planar type Transistor
Datasheet	2SD1719 Datasheet

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Power Transistors 2SD1719 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • High emitter-base voltage (Collector open) VEBO • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0±0.3 1.5±0.1 Unit: mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 4.4±0.