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Power Transistors
2SD1776, 2SD1776A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
s Features
q q
0.7±0.1
Unit: mm
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2
q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1776 2SD1776A 2SD1776 Symbol VCBO VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg
(TC=25˚C)
Ratings 80 100 60 80 6 4 2 0.5 25 2 150 –55 to +150 Unit V
16.7±0.3 14.0±0.5
emitter voltage 2SD1776A Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature
V V A A A W ˚C ˚C
Solder Dip
4.0
7.5±0.
2SD1776 Datasheet
