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2SD1824 - Silicon NPN epitaxial planer type Transistor

Datasheet Summary

Features

  • High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 2.0±0.2 1.3±0.1 0.425 1.25±0.1 0.425 1 0.65 3 2 0.2 (Ta=25˚C) Ratings 100 100 15 50 20 150 150.
  • 55 ~ +150 Unit V V V mA mA mW ˚C ˚C 0.7±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector t.

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Datasheet Details

Part number 2SD1824
Manufacturer Panasonic Semiconductor
File Size 38.62 KB
Description Silicon NPN epitaxial planer type Transistor
Datasheet download datasheet 2SD1824 Datasheet
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Transistor 2SD1824 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 2.1±0.1 s q q q q Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 2.0±0.2 1.3±0.1 0.425 1.25±0.1 0.425 1 0.65 3 2 0.2 (Ta=25˚C) Ratings 100 100 15 50 20 150 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 0.7±0.
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