Datasheet Summary
Transistor
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
2.1±0.1 s q q q q
Features
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0.65 2.0±0.2 1.3±0.1
1.25±0.1
(Ta=25˚C)
Ratings 100 100 15 50 20 150 150
- 55 ~ +150 Unit V V V mA mA mW ˚C ˚C
0.7±0.1 s...
