Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type Darlington
For power amplification plementary to 2SB1252
10.0±0.2 5.5±0.2 2.7±0.2
4.2±0.2
7.5±0.2 s Features q q q q
0.7±0.1
4.2±0.2
Unit: mm
14.0±0.5
Optimum for 35W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 120 100 5 8 5 45 2 150
- 55 to +150 Unit V V V A A W
16.7±0.3
φ3.1±0.1
1.4±0.1
1.3±0.2
Solder Dip s...
