q q q q
0.7±0.1
4.2±0.2
Unit: mm
14.0±0.5
Optimum for 35W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat):.
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Power Transistors
2SD1892
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1252
10.0±0.2 5.5±0.2 2.7±0.2
4.2±0.2
7.5±0.2
s Features
q q q q
0.7±0.1
4.2±0.2
Unit: mm
14.0±0.5
Optimum for 35W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 120 100 5 8 5 45 2 150 –55 to +150 Unit V V V A A W
16.7±0.3
φ3.1±0.1
4.0
1.4±0.1
1.3±0.
2SD1892 Datasheet
