2SD1892 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) High DC Current Gain : hFE= 5000(Min) @IC= 4A Low Collector Saturation Voltgae- : VCE(sat)= 2.5V(Max.)@ IC= 4A Complement to Type 2SB1252 Minimum Lot-to-Lot variations for robust device performance and reliable opera

INCHANGE

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Datasheet Details

Part number	2SD1892
Manufacturer	INCHANGE
File Size	187.19 KB
Description	NPN Transistor
Datasheet	2SD1892 Datasheet
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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1892 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 5000(Min) @IC= 4A ·Low Collector Saturation Voltgae- : VCE(sat)= 2.5V(Max.

Published: Sep 30, 2020 |