Datasheet Details
| Part number | 2SD1896 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.55 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1896-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD1896.
| Part number | 2SD1896 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.55 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1896-InchangeSemiconductor.pdf |
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·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Collector Power Dissipation ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1896 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA;
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