q q q
0.65 max. 1.0 1.0
High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.2
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature.
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Transistor
2SD2184
Silicon NPN epitaxial planer type
For low-frequency output amplification Complementary to 2SB1438
6.9±0.1
0.15
Unit: mm
1.05 2.5±0.1 ±0.05 (1.45) 0.8
0.5 4.5±0.1 0.45–0.05 2.5±0.1
0.7
4.0
s Features
q q q
0.65 max.
1.0 1.0
High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping.
0.2
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*1
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
Ratings 150 150 5 1.
2SD2184 Datasheet
