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Transistor
2SD2185
Silicon NPN epitaxial planer type
For low-frequency output amplification Complementary to 2SB1440
Unit: mm
s Features
q q
4.5±0.1 1.6±0.2
1.5±0.1
Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
2.6±0.1
0.4max.
45°
1.0–0.2
+0.1
0.4±0.08 0.5±0.08 1.5±0.1
4.0–0.20
0.4±0.04
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
(Ta=25˚C)
Ratings 50 50 5 4 3 Unit V V V A A W ˚C ˚C
1:Base 2:Collector 3:Emitter
3
3.0±0.
2SD2185 Datasheet
