q q q
0.7±0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings 20 20 15 1.5 0.7 300 150.
55 ~ +150 Unit V V V A A mW ˚C ˚C
1:Emitter 2:Collector 3:Base
1
2
3
1.27 1.27 2.54±0.15
EIAJ:SC.
72 New S Type Package
s Electrical Characteristics
Par.
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Transistor
2SD2460
Silicon NPN epitaxial planer type
For low-frequency output amplification
Unit: mm
4.0±0.2
s Features
q q q
0.7±0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings 20 20 15 1.5 0.7 300 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C
1:Emitter 2:Collector 3:Base
1
2
3
1.27 1.27 2.54±0.
2SD2460 Datasheet
