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2SD2465 - Silicon NPN Transistor

Key Features

  • q q q 15.0±0.3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD2465 2SD2465A 2SD2465 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings 40 50 20 40 5 8 4 25 2 150.
  • 55 to +150 Unit V 4.1±0.2 8.0±0.2 Solder Dip 3.0±0.2 Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package superior in insulation, which can be installed to the heat sink with one screw 13.7.
  • 0.2 +0.5 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SD2465, 2SD2465A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1603 Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q 15.0±0.3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD2465 2SD2465A 2SD2465 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings 40 50 20 40 5 8 4 25 2 150 –55 to +150 Unit V 4.1±0.2 8.0±0.2 Solder Dip 3.0±0.2 Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package superior in insulation, which can be installed to the heat sink with one screw 13.7–0.2 +0.5 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.