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Transistor
2SD592, 2SD592A
Silicon NPN epitaxial planer type
For low-frequency output amplification Complementary to 2SB621 and 2SB621A
5.1±0.2
Unit: mm
5.0±0.2 4.0±0.2
s Features
q q
Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). (Ta=25˚C)
Ratings 30 60 25 50 5 1.5 1 750 150 –55 ~ +150 Unit V
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD592 2SD592A 2SD592 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol
13.5±0.5
0.45 –0.1 1.27
+0.2
0.45 –0.1
1.27
+0.2
emitter voltage 2SD592A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V A A mW ˚C ˚C
2.54±0.15 1 2 3
2.3±0.
2SD592 Datasheet
