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Transistor
2SB621, 2SB621A
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD592 and 2SD592A
5.0±0.2
Unit: mm
4.0±0.2
q q
Low collector to emitter saturation voltage VCE(sat). High transition frequency fT. (Ta=25˚C)
Ratings –30 –60 –25 –50 –5 –1.5 –1 750 150 –55 ~ +150 Unit V
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB621 2SB621A 2SB621 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol
13.5±0.5
5.1±0.2
s Features
0.45 –0.1
+0.2
0.45 –0.1
1.27
+0.2
emitter voltage 2SB621A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V A A mW ˚C ˚C
1.27
1 2 3
2.3±0.2
2.54±0.
2SD592A Datasheet
