2SD596 Datasheet | Galaxy Microelectronics

Features - High DC current gain - plimentary to 2SB624 - Ro HS pliant with Halogen-free NPN Silicon Epitaxial Planar Transistor 2SD596 Mechanic al Data - Case: SOT-23 - Molding pound: UL flammability classification rating 94V-0 - Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 SOT-23 Ordering Information Part Number 2SD596-A 2SD596-B 2SD596-C 2SD596-D 2SD596-E Package SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 Shipping Quantity 3000 pcs / Tape & Reel 3000 pcs / Tape & Reel 3000 pcs / Tape & Reel 3000 pcs / Tape & Reel 3000 pcs / Tape & Reel Marking Code DV1 DV2 DV3 DV4 DV5 Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current (Continuous) Symbol VCBO VCEO VEBO IC Value 30 25 5 0.7 Unit V V V A Thermal Characteristics Parameter Power Dissipation Junction Temperature Range Storage Temperature Range Symbol PD TJ TSTG Value 0.2 -55 ~ +150 -55 ~ +150 Unit W °C °C STM0447A: June 2021 .gmesemi. NPN Silicon Epitaxial Planar Transistor 2SD596 Electrical Characteristics (@ TA = 25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-emitter Saturation Voltage Base-emitter on Voltage Transition Frequency Collector Output Capacitance Symbol Test Condition V(BR)CBO IC = 100μA, IE = 0 V(BR)CEO IC = 1m A, IB = 0 V(BR)EBO IE = 100μA, IC =...