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2SD596 Datasheet PDF

WEJ 2SD596

NPN Transistor

Part No. 2SD596
Datasheet 2SD596 Download
Manufacturer
WEJ
Description NPN Transistor
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2SD596 datasheet page 1 preview

FEATURES

Power dissipation PCM: 0.2 Collector current ICM: 0.7 Collector-base voltage V(BR)CBO: 30 W (Tamb=25℃) A V SOT-23-3L 1. 9 0. 95¡ À0. 025 1. 02 TD1. BASE .,L2. EMITTER CO3. COLLECTOR 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 2. 92¡ À0. 05 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) NParameter OCollector-base breakdown voltage Collector-emitter breakdown voltage REmitter-base breakdown voltage TCollector cut-off current CEmitter cut-off current ELEDC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1)* hFE(2)* Test conditions Ic=100µA, IE=0 Ic= 1 mA, IB=0 IE= 100µA, IC=0 VCB=30 V , IE=0 VEB= 5V , IC=0 VCE= 1V, IC= 100mA VCE=1V, IC= 700mA MIN 30 25 5 110 50 Collector-emitter saturation voltage Base-emitter voltage EJTransition frequency VCE(sat) * VBE(on) * fT IC=700 mA, IB= 70mA VCE=6V, IC=10mA VCE= 6V