Datasheet4U Logo Datasheet4U.com

2SD592A - Silicon NPN Transistor

This page provides the datasheet information for the 2SD592A, a member of the 2SD0592A Silicon NPN Transistor family.

Datasheet Summary

Features

  • s 0.7±0.2 Unit: mm 5.0±0.2 4.0±0.2.
  • Large collector power dissipation PC.
  • Low collector-emitter saturation voltage VCE(sat) 0.7±0.1.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 50 5 1 1.5 750 150.

📥 Download Datasheet

Datasheet preview – 2SD592A

Datasheet Details

Part number 2SD592A
Manufacturer Panasonic Semiconductor
File Size 106.00 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD592A Datasheet
Additional preview pages of the 2SD592A datasheet.

📁 Similar Datasheet

  • 2SD592A - Silicon Transistor (Micro Electronics)
  • 2SD592 - Silicon Transistor (Micro Electronics)
  • 2SD596 - Silicon NPN Transistor (GME)
  • 2SD596 - NPN Silicon Transistor (NEC)
  • 2SD596 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • 2SD596 - NPN Plastic Encapsulated Transistor (SeCoS)
  • 2SD596 - BIPOLAR TRANSISTORS (Rectron)
  • 2SD596 - NPN Transistor (WEJ)
  • 2SD596 - NPN Transistors (Kexin)
  • 2SD596A - NPN Silicon Transistor (NEC)
Other Datasheets by Panasonic Semiconductor

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.net Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features 0.7±0.2 Unit: mm 5.0±0.2 4.0±0.2 • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 50 5 1 1.5 750 150 −55 to +150 Unit V V 2.3±0.2 0.45+0.15 –0.1 2.5+0.6 –0.2 1 2 3 12.9±0.5 0.45+0.15 –0.1 2.5+0.6 –0.2 V A A mW °C °C 5.1±0.
Published: |