The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Transistor
2SD874, 2SD874A
Silicon NPN epitaxial planer type
For low-frequency power amplification Complementary to 2SB766 and 2SB766A
Unit: mm
s Features
q q q
0.4max.
45°
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD874 2SD874A 2SD874 VCEO VEBO ICP IC PC* Tj Tstg VCBO Symbol
(Ta=25˚C)
Ratings 30 60 25 50 5 1.5 1 1 150 –55 ~ +150 Unit V
3
1.0–0.2
+0.1
0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 2 1
4.0–0.20
0.4±0.04
emitter voltage 2SD874A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
V
marking
V A A W ˚C ˚C
1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package
Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.