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2SK0662 Datasheet Silicon N-channel Junction Fet

Manufacturer: Panasonic

Overview: Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-Channel Junction FET For low-frequency amplification unit: mm (0.

Key Features

  • 0.3+0.1.
  • 0.0 3 0.15+0.10.
  • 0.05 G High mutual conductance gm G Low noise type G S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 1.25±0.10 2.1±0.1 5° 1 2 (0.65) (0.65) 1.3±0.1 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO ID IG PD Tj Tstg Ratings 30.

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