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2SK0664 Datasheet Silicon N-channel Mos Fet

Manufacturer: Panasonic

Overview: Silicon MOS FETs (Small Signal) 2SK0664 (2SK664) Silicon N-Channel MOS FET unit: mm For switching.

Key Features

  • (0.425) 0.3+0.1.
  • 0.0 3 0.15+0.10.
  • 0.05 1.25±0.10 (0.65) (0.65) 1.3±0.1 2.0±0.2 10° Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 150 150.
  • 55 to +150 Unit V V mA mA mW °C °C 1: Gate 2: Source 3: Drain 0 to 0.1 0.9±0.1 0.9+0.2.
  • 0.1 I Absolute Maximum Ratings (Ta = 25°C) EIAJ:.

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