q High-speed switching q Wide frequency band q Incorporating a built-in gate protection-diode q Allowing 2.5V drive
0.65±0.15
1.5.
0.05
+0.25
0.95
2.9.
0.05
1
1.9±0.2
+0.2
0.95
3
0.4.
0.05
+0.1
2
s Absolute Maximum Ratings (Ta = 25°C)
+0.2 1.1.
0.1
1.45
Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature
Symbol VDS VGSO ID IDP PD Tch Tstg
Rating.
The following content is an automatically extracted verbatim text
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Silicon MOS FETs (Small Signal)
2SK1228
Silicon N-Channel MOS FET
For switching
2.8 –0.3
+0.2
unit: mm
0.65±0.15
s Features
q High-speed switching q Wide frequency band q Incorporating a built-in gate protection-diode q Allowing 2.5V drive
0.65±0.15
1.5 –0.05
+0.25
0.95
2.9 –0.05
1
1.9±0.2
+0.2
0.95
3
0.4 –0.05
+0.1
2
s Absolute Maximum Ratings (Ta = 25°C)
+0.2 1.1 –0.1
1.
2SK1228 Datasheet
