q High mutual conductance gm q Low noise voltage of NV
0.4.
0.05
+0.1
2.4±0.1 1 0.95 0.95 1.9±0.2
1.5.
0.05
+0.25
1.9±0.1
1.45 2 0.16.
0.06
+0.1 +0.1
3
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Drain to Gate voltage Drain to Source current Drain to Gate current Gate to Source current Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDSO VDGO IDSO IDGO IGSO PD Topr Tstg Ratings 20 20 2 2 2 200.
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Silicon Junction FETs (Small Signal)
2SK123
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone
+0.2 5.8−0.3
unit: mm
s Features
q High mutual conductance gm q Low noise voltage of NV
0.4−0.05
+0.1
2.4±0.1 1 0.95 0.95 1.9±0.2
1.5−0.05
+0.25
1.9±0.1
1.45 2 0.16−0.06
+0.1 +0.1
3
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Drain to Gate voltage Drain to Source current Drain to Gate current Gate to Source current Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDSO VDGO IDSO IDGO IGSO PD Topr Tstg Ratings 20 20 2 2 2 200 −20 to +80 −55 to +150 Unit V V mA mA mA mW °C °C
0.4−0.05
+0.1
0.4−0.
2SK123 Datasheet
