q High-speed switching q Wide frequency band q Incorporating a built-in gate protection-diode q Allowing 2.5V drive
0.65
0.425
1.25±0.1
0.425
1
2.0±0.2
1.3±0.1
0.65
3
2
s Absolute Maximum Ratings (Ta = 25°C)
0.9±0.1
Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature
VDS VGSO ID IDP PD Tch Tstg
50 10 50 100 150 150.
55 to +150
V V mA mA mW °C °C
0.7±0.1
0 to 0.1
0.2±0.1
1: Gat.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Silicon MOS FETs (Small Signal)
2SK1374
Silicon N-Channel MOS FET
For switching
unit: mm
2.1±0.1
s Features
q High-speed switching q Wide frequency band q Incorporating a built-in gate protection-diode q Allowing 2.5V drive
0.65
0.425
1.25±0.1
0.425
1
2.0±0.2
1.3±0.1
0.65
3
2
s Absolute Maximum Ratings (Ta = 25°C)
0.9±0.1
Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature
VDS VGSO ID IDP PD Tch Tstg
50 10 50 100 150 150 −55 to +150
V V mA mA mW °C °C
0.7±0.1
0 to 0.1
0.2±0.
2SK1374 Datasheet
