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2SK2751 Datasheet Silicon N-channel Junction Fet

Manufacturer: Panasonic

Overview: Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor 0.65±0.15 +0.2 unit: mm 0.65±0.15 2.8 –0.3 1.5 –0.05 +0.

Key Features

  • q Low noise-figure (NF) q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.95 2.9.
  • 0.05 1 1.9±0.2 +0.2 0.95 3 0.4.
  • 0.05 +0.1 2 1.45 +0.2 1.1.
  • 0.1 Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings.
  • 40 10 2 200 150.
  • 55 to +150 Unit V mA m.

2SK2751 Distributor

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