2SK2751 - Silicon N-Channel Junction FET

Panasonic

Key Features

q Low noise-figure (NF) q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.95 2.9.
0.05 1 1.9±0.2 +0.2 0.95 3 0.4.
0.05 +0.1 2 1.45 +0.2 1.1.
0.1 Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings.
40 10 2 200 150.
55 to +150 Unit V mA m.

2SK2751 silicon n-channel junction fet by Panasonic - Datasheet Preview

Datasheet Details

Part number	2SK2751
Manufacturer	Panasonic
File Size	30.93 KB
Description	Silicon N-Channel Junction FET
Datasheet	2SK2751 Datasheet

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Full PDF Text Transcription (Reference)

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Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor 0.65±0.15 +0.2 unit: mm 0.65±0.15 2.8 –0.3 1.5 –0.05 +0.25 s Features q Low noise-figure (NF) q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 0.4 –0.05 +0.1 2 1.45 +0.2 1.1 –0.