2SK2751
2SK2751 is Silicon N-Channel Junction FET manufactured by Panasonic.
Features q Low noise-figure (NF) q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
0.95 2.9
- 0.05
1.9±0.2
+0.2
- 0.05
+0.1
+0.2 1.1
- 0.1
Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature
Symbol VGDS ID IG PD Tch Tstg
Ratings
- 40 10 2 200 150
- 55 to +150
Unit V m A m A m W °C °C
1: Source 2: Drain 3: Gate
JEDEC: TO-236 EIAJ: SC-59 Mini Type Package (3-pin)
Marking Symbol: HS s Electrical Characteristics (Ta = 25 ± 3°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Symbol IDSS IGSS VGDS VGSC | Yfs | Coss Conditions VDS = 10V, VGS = 0 VGS =
- 20V, VDS = 0 IG =
- 100µA, VDS = 0 VDS = 10V, ID = 1µA VDS = 10V, ID = 1µA, f = 1k Hz VDS = 10V, VGS = 0, f = 1MHz 2.5 5 1 1
- 40
- 3.5 min 1.4 typ max 4.7
- 1 Unit m A n A V V m S p F p F p F
Input capacitance (mon Source) Ciss Output capacitance (mon Source) Reverse transfer capacitance (mon Source) Crss Note: The test method to ply with JISC7030, Field effect transistor test method.
0 to 0.1 s Absolute Maximum Ratings (Ta = 25°C)
0.1 to 0.3 0.4±0.2
- 0.06
+0.1
Silicon Junction FETs (Small Signal)
PD ...
