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2SK3028 Datasheet Silicon N-Channel Power F-MOS FET

Manufacturer: Panasonic

Overview

Power F-MOS FETs 2SK3028 (Tentative) Silicon N-Channel Power F-MOS.

Key Features

  • q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage unit: mm 15.5±0.5 4.5 φ3.2±0.1 10.0 3.0±0.3 26.5±0.5 18.6±0.5 q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 2.0 1.2 5˚ 4.0 2.0±0.2 1.1±0.1 2.0 5˚ 5˚ 0.7±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Ga.