Datasheet Summary
Silicon Junction FETs (Small Signal)
Silicon N-Channel Junction FET
For low-frequency amplification For switching
0.65±0.15
+0.2 unit: mm
0.65±0.15
- 0.3
- 0.05
+0.25 s Features q Low noise-figure (NF) q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
0.95 2.9
- 0.05
1.9±0.2
+0.2
- 0.05
+0.1
Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature
VDSX VGDO VGSO ID IG PD Tch Tstg
- 55
- 55 30 10 200 150
- 55 to +150
V V V mA mA mW °C °C
1:...
