Datasheet Summary
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Silicon MOSFETs (Small Signal)
Silicon N-channel MOSFET
For switching circuits
- Features
- High-speed switching
- SSSMini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
0.33+0.05
- 0.02 3 0.15 min. 0.80±0.05 1.20±0.05 0.10+0.05
- 0.02
Unit: mm
(0.40) (0.40) 0.80±0.05 1.20±0.05 5°
Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Power dissipation Channel temperature Storage temperature
Symbol VDSS VGSS ID IDP PD Tch Tstg
Rating 30 ±12 100 200 100 125
- 55 to +125
Unit V V mA mA mW °C °C
1: Gate 2: Source 3: Drain
0.15 min.
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