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Silicon MOS FETs (Small Signal)
2SK601
Silicon N-Channel MOS FET
For switching
unit: mm
s Features
q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL q Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
2.6±0.1
4.5±0.1 1.6±0.2
1.5±0.1
0.4max.
45˚
1.0–0.2
+0.1
0.4±0.08
4.0–0.20
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature
*
0.5±0.08 1.5±0.1 3.0±0.15
0.4±0.04
Symbol VDS VGSO ID IDP PD
*
Ratings 80 20 ±0.
2SK601 Datasheet
